[PATCH 1/2] mini2440: Add more info about possible SDRAM and flash devices

[Juergen Beisert]

From: Juergen Beisert <juergen at kreuzholzen.de>

It seems there are various variants of the mini2440 in the wild. Not only
the SDRAMs differ, but more important the NANDs also differ.

Signed-off-by: Juergen Beisert <juergen at kreuzholzen.de>
---
 arch/arm/boards/mini2440/mini2440.c |   50 +++++++++++++++++++++++-----------
 1 files changed, 34 insertions(+), 16 deletions(-)

diff --git a/arch/arm/boards/mini2440/mini2440.c b/arch/arm/boards/mini2440/mini2440.c
index ab309a0..1e5813a 100644
--- a/arch/arm/boards/mini2440/mini2440.c
+++ b/arch/arm/boards/mini2440/mini2440.c
@@ -316,23 +316,41 @@ This system is based on a Samsung S3C2440 CPU. The card is shipped with:
 - 12 MHz crystal reference
 - 32.768 kHz crystal reference
 - SDRAM 64 MiB (one bank only)
-   - HY57V561620 (two devices for 64 MiB to form a 32 bit bus)
-     - 4M x 16bit x 4 Banks Mobile SDRAM
-     - 8192 refresh cycles / 64 ms
-     - CL2\@100 MHz
-     - 133 MHz max
-     - collumn address size is 9 bits
-     - row address size is 13 bits
-   - MT48LC16M16 (two devices for 64 MiB to form a 32 bit bus)
-     - 4M x 16bit x 4 Banks Mobile SDRAM
-     - commercial & industrial type
-     - 8192 refresh cycles / 64 ms
-     - CL2\@100 MHz
-     - 133 MHz max
-     - collumn address size is 9 bits
-     - row address size is 13 bits
+   - Hynix SDRAM
+    - HY57V561620FTP-H (two devices for 64 MiB to form a 32 bit bus)
+      - 4M x 16bit x 4 Banks Mobile SDRAM
+      - 8192 refresh cycles / 64 ms
+      - CL2\@100 MHz
+      - 133 MHz max
+      - collumn address size is 9 bits
+      - row address size is 13 bits
+   - Micron SDRAM
+    - MT48LC16M16A2-75IT (two devices for 64 MiB to form a 32 bit bus)
+    - MT48LC16M16A2-7E (two devices for 64 MiB to form a 32 bit bus)
+      - 4M x 16bit x 4 Banks Mobile SDRAM
+      - commercial & industrial type
+      - 8192 refresh cycles / 64 ms
+      - CL2\@100 MHz
+      - 133 MHz max
+      - collumn address size is 9 bits
+      - row address size is 13 bits
 - NAND Flash 128MiB...1GiB
-   - K9Fxx08
+   - K9F1208U0C
+      - VID: 0xec, DID: 0x76
+      - Samsung/64MiB 3,3V 8-bit
+      - 512 + 8 bytes per page, 16 kiB block size, 4 address cycles
+   - K9F1G08UOB
+      - VID: 0xec, DID: 0xf1
+      - Samsung/128MiB 3,3V 8-bit
+      - 2048 + 64 bytes per page, 128 kiB block size, 4 address cycles
+   - K9F2G08UOB
+      - VID: 0xec, DID: 0xda
+      - Samsung/256MiB 3,3V 8-bit
+      - 2048 + 64 bytes per page, 128 kiB block size, 5 address cycles
+   - K9K8G08U0A
+      - VID: 0xec, DID: 0xd3
+      - Samsung/1GiB 3,3V 8-bit
+      - 2048 + 64 bytes per page, 128 kiB block size, 5 address cycles
 - NOR Flash (up to 22 address lines available)
    - AM29LV160DB, 2 MiB
    - SST39VF1601, 2 MiB
-- 
1.7.2.3