[PATCH 1/4] iio: adc: ina2xx: Make max expected current configurable
Maciej Purski
m.purski at samsung.com
Thu Sep 28 05:50:12 PDT 2017
Max expected current is used for calculating calibration register value,
Current LSB and Power LSB according to equations found in ina datasheet.
Max expected current is now implicitly set to default value,
which is 2^15, thanks to which Current LSB is equal to 1 mA and
Power LSB is equal to 20000 uW or 25000 uW depending on ina model.
Make max expected current configurable, just like it's already done
with shunt resistance: from device tree, platform_data or later
from sysfs. On each max_expected_current change, calculate new values
for Current LSB and Power LSB. According to datasheet Current LSB should
be calculated by dividing max expected current by 2^15, as values read
from device registers are in this case 16-bit integers. Power LSB
is calculated by multiplying Current LSB by a factor, which is defined
in ina documentation.
Signed-off-by: Maciej Purski <m.purski at samsung.com>
---
drivers/iio/adc/ina2xx-adc.c | 110 ++++++++++++++++++++++++++++++-----
include/linux/platform_data/ina2xx.h | 2 +
2 files changed, 98 insertions(+), 14 deletions(-)
diff --git a/drivers/iio/adc/ina2xx-adc.c b/drivers/iio/adc/ina2xx-adc.c
index f387b97..883fede 100644
--- a/drivers/iio/adc/ina2xx-adc.c
+++ b/drivers/iio/adc/ina2xx-adc.c
@@ -56,6 +56,7 @@
#define INA226_DEFAULT_IT 1110
#define INA2XX_RSHUNT_DEFAULT 10000
+#define INA2XX_MAX_EXPECTED_A_DEFAULT (1 << 15) /* current_lsb = 1 mA */
/*
* bit masks for reading the settings in the configuration register
@@ -114,7 +115,7 @@ struct ina2xx_config {
int shunt_div;
int bus_voltage_shift;
int bus_voltage_lsb; /* uV */
- int power_lsb; /* uW */
+ int power_lsb_factor;
enum ina2xx_ids chip_id;
};
@@ -123,7 +124,10 @@ struct ina2xx_chip_info {
struct task_struct *task;
const struct ina2xx_config *config;
struct mutex state_lock;
- unsigned int shunt_resistor;
+ unsigned int shunt_resistor; /* uOhms */
+ unsigned int max_expected_current; /* mA */
+ int current_lsb; /* uA */
+ int power_lsb; /* uW */
int avg;
int int_time_vbus; /* Bus voltage integration time uS */
int int_time_vshunt; /* Shunt voltage integration time uS */
@@ -137,7 +141,7 @@ static const struct ina2xx_config ina2xx_config[] = {
.shunt_div = 100,
.bus_voltage_shift = 3,
.bus_voltage_lsb = 4000,
- .power_lsb = 20000,
+ .power_lsb_factor = 20,
.chip_id = ina219,
},
[ina226] = {
@@ -146,7 +150,7 @@ static const struct ina2xx_config ina2xx_config[] = {
.shunt_div = 400,
.bus_voltage_shift = 0,
.bus_voltage_lsb = 1250,
- .power_lsb = 25000,
+ .power_lsb_factor = 25,
.chip_id = ina226,
},
};
@@ -210,14 +214,15 @@ static int ina2xx_read_raw(struct iio_dev *indio_dev,
case INA2XX_POWER:
/* processed (mW) = raw*lsb (uW) / 1000 */
- *val = chip->config->power_lsb;
+ *val = chip->power_lsb;
*val2 = 1000;
return IIO_VAL_FRACTIONAL;
case INA2XX_CURRENT:
- /* processed (mA) = raw (mA) */
- *val = 1;
- return IIO_VAL_INT;
+ /* processed (mA) = raw*lsb (uA) / 1000 */
+ *val = chip->current_lsb;
+ *val2 = 1000;
+ return IIO_VAL_FRACTIONAL;
}
}
@@ -434,24 +439,47 @@ static ssize_t ina2xx_allow_async_readout_store(struct device *dev,
}
/*
- * Set current LSB to 1mA, shunt is in uOhms
- * (equation 13 in datasheet). We hardcode a Current_LSB
- * of 1.0 x10-6. The only remaining parameter is RShunt.
+ * Calculate calibration value according to equation 1 in ina226 datasheet
+ * http://www.ti.com/lit/ds/symlink/ina226.pdf.
+ * Current LSB is in uA and RShunt is in uOhms, so RShunt should be
+ * converted to mOhms in order to keep the scale.
* There is no need to expose the CALIBRATION register
* to the user for now. But we need to reset this register
- * if the user updates RShunt after driver init, e.g upon
- * reading an EEPROM/Probe-type value.
+ * if the user updates RShunt or max expected current after driver
+ * init, e.g upon reading an EEPROM/Probe-type value.
*/
static int ina2xx_set_calibration(struct ina2xx_chip_info *chip)
{
+ unsigned int rshunt = DIV_ROUND_CLOSEST(chip->shunt_resistor, 1000);
u16 regval = DIV_ROUND_CLOSEST(chip->config->calibration_factor,
- chip->shunt_resistor);
+ chip->current_lsb * rshunt);
return regmap_write(chip->regmap, INA2XX_CALIBRATION, regval);
}
+/*
+ * Set max_expected_current (mA) and calculate current_lsb (uA),
+ * according to equation 2 in ina226 datasheet. Power LSB is calculated
+ * by multiplying Current LSB by a given factor, which may vary depending
+ * on ina version.
+ */
+static int set_max_expected_current(struct ina2xx_chip_info *chip,
+ unsigned int val)
+{
+ if (val <= 0 || val > chip->config->calibration_factor)
+ return -EINVAL;
+
+ chip->max_expected_current = val;
+ chip->current_lsb = DIV_ROUND_CLOSEST(chip->max_expected_current * 1000,
+ 1 << 15);
+ chip->power_lsb = chip->current_lsb * chip->config->power_lsb_factor;
+
+ return 0;
+}
+
static int set_shunt_resistor(struct ina2xx_chip_info *chip, unsigned int val)
{
+
if (val <= 0 || val > chip->config->calibration_factor)
return -EINVAL;
@@ -493,6 +521,39 @@ static ssize_t ina2xx_shunt_resistor_store(struct device *dev,
return len;
}
+static ssize_t ina2xx_max_expected_current_show(struct device *dev,
+ struct device_attribute *attr,
+ char *buf)
+{
+ struct ina2xx_chip_info *chip = iio_priv(dev_to_iio_dev(dev));
+
+ return sprintf(buf, "%d\n", chip->max_expected_current);
+}
+
+static ssize_t ina2xx_max_expected_current_store(struct device *dev,
+ struct device_attribute *attr,
+ const char *buf, size_t len)
+{
+ struct ina2xx_chip_info *chip = iio_priv(dev_to_iio_dev(dev));
+ unsigned long val;
+ int ret;
+
+ ret = kstrtoul((const char *) buf, 10, &val);
+ if (ret)
+ return ret;
+
+ ret = set_max_expected_current(chip, val);
+ if (ret)
+ return ret;
+
+ /* Update the Calibration register */
+ ret = ina2xx_set_calibration(chip);
+ if (ret)
+ return ret;
+
+ return len;
+}
+
#define INA219_CHAN(_type, _index, _address) { \
.type = (_type), \
.address = (_address), \
@@ -755,10 +816,15 @@ static IIO_DEVICE_ATTR(in_shunt_resistor, S_IRUGO | S_IWUSR,
ina2xx_shunt_resistor_show,
ina2xx_shunt_resistor_store, 0);
+static IIO_DEVICE_ATTR(in_max_expected_current, S_IRUGO | S_IWUSR,
+ ina2xx_max_expected_current_show,
+ ina2xx_max_expected_current_store, 0);
+
static struct attribute *ina219_attributes[] = {
&iio_dev_attr_in_allow_async_readout.dev_attr.attr,
&iio_const_attr_ina219_integration_time_available.dev_attr.attr,
&iio_dev_attr_in_shunt_resistor.dev_attr.attr,
+ &iio_dev_attr_in_max_expected_current.dev_attr.attr,
NULL,
};
@@ -766,6 +832,7 @@ static struct attribute *ina226_attributes[] = {
&iio_dev_attr_in_allow_async_readout.dev_attr.attr,
&iio_const_attr_ina226_integration_time_available.dev_attr.attr,
&iio_dev_attr_in_shunt_resistor.dev_attr.attr,
+ &iio_dev_attr_in_max_expected_current.dev_attr.attr,
NULL,
};
@@ -851,6 +918,21 @@ static int ina2xx_probe(struct i2c_client *client,
if (ret)
return ret;
+ if (of_property_read_u32(client->dev.of_node,
+ "max-expected-current", &val) < 0) {
+ struct ina2xx_platform_data *pdata =
+ dev_get_platdata(&client->dev);
+
+ if (pdata && pdata->max_mA != 0)
+ val = pdata->max_mA;
+ else
+ val = INA2XX_MAX_EXPECTED_A_DEFAULT;
+ }
+
+ ret = set_max_expected_current(chip, val);
+ if (ret)
+ return ret;
+
/* Patch the current config register with default. */
val = chip->config->config_default;
diff --git a/include/linux/platform_data/ina2xx.h b/include/linux/platform_data/ina2xx.h
index 9abc0ca..f02b1d8 100644
--- a/include/linux/platform_data/ina2xx.h
+++ b/include/linux/platform_data/ina2xx.h
@@ -13,7 +13,9 @@
/**
* struct ina2xx_platform_data - ina2xx info
* @shunt_uohms shunt resistance in microohms
+ * @max_mA max expected current in mA
*/
struct ina2xx_platform_data {
long shunt_uohms;
+ int max_mA;
};
--
2.7.4
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