[PATCH 2/4] mtd: nand: implement two pairing scheme

George Spelvin linux at sciencehorizons.net
Sun Jun 12 05:25:49 PDT 2016


>> (Another thing I thought of, but am less sure of, is packing the group
>> and pair numbers into a register-passable int rather than a structure.
>> Even 2 bits for the group is probably the most that will ever be needed,
>> but it's easy to say the low 4 bits are the group and the high 28 are
>> the pair.  Just create a few access macros to pull them apart.

> We could indeed do that, but again, do we really need to optimize
> things like that?

I don't have a good mental model of what the code calling these
translation functions looks like.  I was actually thinking that
if the results were returned by value, then the page to pair/group
translation function could be __pure, too, which might allow
for more optimization of the caller.

In fact, if (and only if!) the struct mtd_info structures are all
statically initialized, it would be legal to declare the functions
__attribute__const__.

Normally, an attribute((const)) function isn't allowed to dereference
pointers, but it *is* allowed to use information known at compile time,
and if the pointer is to a structure known at compile-time, then it's
okay.

All __attribute_const__ says is that the return value doesn't depend on
any *mutable* state.

>> Well, yes, but you may need to do conversion ops for in-memory cache
>> lookups or searching for free blocks, or wear-levelling computations,
>> all of which may involve a great many conversions per actual I/O.
>
> That's true, even if I don't think it makes such a big difference (you
> don't have that much paired pages manipulation that are not followed by
> read/write accesses, and this is where the contention is).

In that case, there's not much to worry about.  As I said, I don't have a
good idea what this information is used for.

>> However, it's desirable to alternate group-0 and group-1 pages, since
>> the write operations are rather different and even take different amounts
>> of time.  Alternating them makes it possible to:
>> 1) Possibly overlap parts of the writes that use different on-chip
>>    resources, and
>> 2) Average the non-overlapping times for minimum jitter.

> Okay, that's actually a good reason, and probably the part I was
> missing to explain these non-log2 distance scheme leading to
> heterogeneous distance (the first and last set of pages don't have
> the same stride).

Please note that I'm guessing, too; I don't actually *know*.

But the idea seems to hold together.

> Still, I've seen weird things while working on modern MLC NANDs which
> makes me think the pairing scheme is also here to help mitigate the
> write-disturb effect, but I might be wrong. The behavior I'm
> describing here has been observed on Hynix (H27QCG8T2E5R=E2=80=90BCF) and
> Toshiba (TC58TEG5DCLTA00) NANDs so far. When I write the 2 pages in a
> pair, but not the following page, I see a high number of bitflips in
> the last programmed page until the next page is programmed.
> 
> Let's take a real example. My NAND is exposing a stride-3 pairing
> scheme, when I only program page 0, 1, 2, page 2 is showing a high
> number of bitflips until page 3 is programmed. Actually, I don't
> remember if the number decrease after programming page 3 or 4, but my
> guess is that the NAND is accounting for future write-disturb when
> programming a page in group 1, which makes this page un-reliable until
> the subsequent page(s) have been programmed.
> 
> What's your opinion on that?

I'm a bit confused, too, but that actually seems plausible.  The Samsung
data sheet you pointed me to explicitly says that the pages in a block
must be programmed in order, no exceptions.  (In fact, an interesting
question is whether bad pages should be skipped or not!)

Given that, very predictable writer ordering, it would make sense to
precompensate for write disturb.

>> Also, the data sheets are a real PITA to find.  I have yet to
>> see an actual data sheet that documents the stride-3 pairing scheme.

> Yes, that's a real problem. Here is a Samsung NAND data sheet
> describing stride-3 [1], and an Hynix one describing stride-6 [2].
> 
> [1]http://dl.btc.pl/kamami_wa/k9gbg08u0a_ds.pdf
> [2]http://www.szyuda88.com/uploadfile/cfile/201061714220663.pdf

Thank you very much!

Did you see the footnote at the bottom of p. 64 of the latter?
Does that affect your pair/group addressing scheme?

It seems they are grouping not just 8K pages into even/odd double-pages,
and those 16K double-pages are being addressed with stride of 3.

But in particular, an interrupted write is likely to corrupt both
double-pages, 32K of data!



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