questions about [PATCH]mtd: nand: fix SCAN2NDPAGE check for BBM
Yanjiantao
yanjiantao at hisilicon.com
Tue Oct 13 04:33:54 PDT 2015
Dear Brian,
i read the patch: " mtd: nand: fix SCAN2NDPAGE check for BBM "
And i am confused about the markbad flows.
xxxxx;
if (chip->bbt_options & NAND_BBT_SCANLASTPAGE)
ofs += mtd->erasesize - mtd->writesize;
xxxxx;
do {
if (chip->options & NAND_BUSWIDTH_16) {
chip->cmdfunc(mtd, NAND_CMD_READOOB,
chip->badblockpos & 0xFE, page);
bad = cpu_to_le16(chip->read_word(mtd));
if (chip->badblockpos & 0x1)
bad >>= 8;
else
bad &= 0xFF;
} else {
chip->cmdfunc(mtd, NAND_CMD_READOOB, chip->badblockpos,
page);
bad = chip->read_byte(mtd);
}
if (likely(chip->badblockbits == 8))
res = bad != 0xFF;
else
res = hweight8(bad) < chip->badblockbits;
ofs += mtd->writesize;
page = (int)(ofs >> chip->page_shift) & chip->pagemask;
i++;
} while (!res && i < 2 && (chip->bbt_options & NAND_BBT_SCAN2NDPAGE));
mark bad flows is the same.
If I understand the patch right, then I think that:
1. when NAND_BBT_SCANLASTPAGE is set, markbad and checkbad on the last page only.
2. when NAND_BBT_SCAN2NDPAGE is set, markbad and checkbad on the 1st and 2nd page.
I checked some datasheets of different manufacturers(such as SAMSUNG/HYNIX/MICRON/TOSHIBA), they claim that bad block marker is on 1st/2nd, or 1st/last, or 1st/2nd/last(for spansion).
the checkbad method may check fail in some cases:
for example,:
1. for spansion nand(bad block marker is on 1st or 2nd or last page), set NAND_BBT_SCAN2NDPAGE while badblock marker is on last page or set NAND_BBT_SCANLASTPAGE while badblock marker is on 1st/2nd page may cause badblock chech failed.
2. for HYNIX (H27UBG8T2CTR) nand (bad block marker is on 1st or last page), check may failed whether NAND_BBT_SCANLASTPAGE is set or not.
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