[PATCH 3/4] dt-bindings: hwmon: Add max-expected-current property to ina2xx

[Maciej Purski]

On 10/01/2017 12:31 PM, Jonathan Cameron wrote:
> On Thu, 28 Sep 2017 14:50:14 +0200
> Maciej Purski <m.purski at samsung.com> wrote:
> 
>> Add optional max expected current property which allows calibrating
>> the ina sensor in order to achieve requested precision. Document
>> the changes in Documentation/hwmon/ina2xx.
>>
> 
> This is introducing new generic devicetree bindings..
> I'm not totally sure we want to do this rather than having a
> manufacturer specific binding...  I don't have a good feeling for
> how common this will be in other devices.
> 
> If it's generic, then this isn't necessarily the place to define it.
> 
> Jonathan
>

I agree, this should be manufacturer-specific property. Thanks.

>> Signed-off-by: Maciej Purski <m.purski at samsung.com>
>> ---
>>   Documentation/devicetree/bindings/hwmon/ina2xx.txt | 4 +++-
>>   Documentation/hwmon/ina2xx                         | 9 +++++----
>>   2 files changed, 8 insertions(+), 5 deletions(-)
>>
>> diff --git a/Documentation/devicetree/bindings/hwmon/ina2xx.txt b/Documentation/devicetree/bindings/hwmon/ina2xx.txt
>> index 02af0d9..25ba372 100644
>> --- a/Documentation/devicetree/bindings/hwmon/ina2xx.txt
>> +++ b/Documentation/devicetree/bindings/hwmon/ina2xx.txt
>> @@ -14,11 +14,13 @@ Optional properties:
>>   
>>   - shunt-resistor
>>   	Shunt resistor value in micro-Ohm
>> -
>> +- max-expected-current
>> +	Max expected current value in mA
>>   Example:
>>   
>>   ina220 at 44 {
>>   	compatible = "ti,ina220";
>>   	reg = <0x44>;
>>   	shunt-resistor = <1000>;
>> +	max-expected-current = <3000>;
>>   };
>> diff --git a/Documentation/hwmon/ina2xx b/Documentation/hwmon/ina2xx
>> index cfd31d9..e9ca838 100644
>> --- a/Documentation/hwmon/ina2xx
>> +++ b/Documentation/hwmon/ina2xx
>> @@ -51,10 +51,11 @@ INA230 and INA231 are high or low side current shunt and power monitors
>>   with an I2C interface. The chips monitor both a shunt voltage drop and
>>   bus supply voltage.
>>   
>> -The shunt value in micro-ohms can be set via platform data or device tree at
>> -compile-time or via the shunt_resistor attribute in sysfs at run-time. Please
>> -refer to the Documentation/devicetree/bindings/i2c/ina2xx.txt for bindings
>> -if the device tree is used.
>> +The shunt value in micro-ohms and max expected current in mA can be set
>> +via platform data or device tree at compile-time or via the shunt_resistor
>> +and max_expected_current attributes in sysfs at run-time. Please refer to the
>> +Documentation/devicetree/bindings/i2c/ina2xx.txt for bindings if the
>> +device tree is used.
>>   
>>   Additionally ina226 supports update_interval attribute as described in
>>   Documentation/hwmon/sysfs-interface. Internally the interval is the sum of
> 
> 
> 
>